Running Specs: |
IC Grade Mono Silicon Wafer |
|
Size |
3"/4"/5"/6"/8" |
|
Growth method |
CZ |
|
Grade |
Test / Prime grade |
|
Diameter |
100±0.4mm / 125±0.5mm / 150±0.5mm |
|
Orientation |
<111>/<100> |
|
Type |
N-type/P-type |
|
Dopant |
P-type:Boron |
|
N-type:Phos./As./Sb. |
|
Purity |
11N(99.999999999%) |
|
Oxygen Content |
≤18 New PPMA |
|
Carborn Content |
≤1 New PPMA |
|
Resistivity |
≥0.001Ω·cm |
|
Thickness |
≥200um, or according to your requirement |
|
Others |
TTV≤10um, Bow≤35um,Warp≤35um |
|
Particles |
≥0.3um@≤10PPW |
|
Surface |
Lapped/Single Side Polished / Double Side Polished. |
|
MOQ |
100pcs |
|
Package |
Packed in cassette,and sealed in vacuum bag,25pcs/cassette. |
|