Lithium Niobate wafer SAW grade wafer

Description Review

Description

Lithium Niobate is used extensively in the telecoms market:
In mobile telephones and optical modulators. It is the material of choice for the manufacture of surface acoustic wave devices.
Black LN wafers are used in the manufacturing of substrates for RF type SAW devices, high frequency filters with a wide bandwidth.
These next generation substrates are necessary for handling high volume graphics applications for wireless communications such as "Bluetooth" etc.

Basic materials characteristics
Crystal Structure	Trigonal, point group 3m
Lattice Parameters	a=5.148Å, c=13.863Å
Density	4.64 g/cm³
Melting Point	1250 °C
Curie Point	1142±2℃
Mohs Hardness	5
Dielectric Constant	e₁₁/e₀ = 85; e₃₃/e₀ = 29.5
Thermal Conductivity	38 W/m/°C at 25°C
Thermal Expansion Coefficient	a₁=a₂ =2x10^-6/°C, a₃=2.2x10^-6/ °C at 25°C
Piezoelectric Strain Constant	d₂₂ = 2.04 x 10^-11 C/N, d₃₃ = 19.22 x 10^-11 C/N

Black LN property list
Item	Standard Black	White LN
Bulk resistivity(Ω.cm)	2.40E+10	1.20E+150
Bulk conductivity(Ω^-1.cm^-1)	4.17E-11	8.30E-16
Surface Electric Potential^*1 /100m φ (kv)	<0.05	3.05
Electrical charges neutralization(sec.)_	<60	73
Optical transmition(%)^*2 color	Dark gray	Colorless

Running Specs
	Item	4"	6"	8"
	Cutting Type	Typical 36°Y/64°Y/128°Y/0°Y-Z/°Y/X/Y/Z-cut etc
	Diameter(round or square) (mm)	100	150	200
	Tol(±mm)	0.3	0.3	0.3
	Thickness (mm)	≥0.15	≥0.25	≥0.3
	Primary flat (mm)	32±2	57.5/42±2	notch
	LTV (5mmx5mm) (µm)	< 1	< 1	< 1
	TTV (µm)	< 1.5	< 3	< 5
	Bow (µm)	±20	±30	±40
	Warp (µm)	≤ 25	≤ 30	≤ 50
	PLTV (<0.5µm within 5*5mm) %	≥95%	≥95%	≥95%
	Edge bevel	According with IEC62276& SEMI M1.2 Standard
	Polished side Ra (nm)	≤1.5
	Back Side Criteria (µm)	general Ra:0.2-0.5or polished

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