Lithium Niobate wafer SAW grade

Item No.: SLN
Item                4"    6" 8"
Cutting Type Typical 36°Y/64°Y/128°Y/0°Y-Z/°Y/X/Y/Z-cut etc
Diameter(mm) 100 150 200
Tol(±mm) 0.3  0.3  0.3
Thickness (mm)≥0.15 ≥0.25 ≥0.3
Primary flat (mm)32±2 57.5/42±2 notch
Description Review
Description
Lithium Niobate is used extensively in the telecoms market:
In mobile telephones and optical modulators. It is the material of choice for the manufacture of surface acoustic wave devices.
Black LN wafers are used in the manufacturing of substrates for RF type SAW devices, high frequency filters with a wide bandwidth.
These next generation substrates are necessary for handling high volume graphics applications for wireless communications such as "Bluetooth" etc.

 
Basic materials characteristics  
Crystal Structure Trigonal, point group 3m
Lattice Parameters a=5.148Å, c=13.863Å
Density 4.64 g/cm3 
Melting Point 1250 °C
Curie Point 1142±2
Mohs Hardness 5
Dielectric Constant e11/e0 = 85; e33/e0 = 29.5
Thermal Conductivity 38 W/m/°C at 25°C
Thermal Expansion Coefficient a1=a2 =2x10-6/°C, a3=2.2x10-6/ °C at 25°C
Piezoelectric Strain Constant d22 = 2.04 x 10-11 C/N, d33 = 19.22 x 10-11 C/N

 
 Black LN property list
 
   
Item Standard Black White LN
Bulk resistivity(Ω.cm) 2.40E+10 1.20E+150
Bulk conductivity(Ω-1.cm-1) 4.17E-11 8.30E-16
Surface Electric Potential*1 /100m φ (kv) <0.05 3.05
Electrical charges neutralization(sec.)_ <60 73
Optical transmition(%)*2 color Dark gray Colorless
 
 
Running Specs        
  Item 4" 6" 8"
  Cutting Type Typical 36°Y/64°Y/128°Y/0°Y-Z/°Y/X/Y/Z-cut etc
  Diameter(round or square) (mm) 100 150 200
  Tol(±mm) 0.3 0.3 0.3
  Thickness (mm) ≥0.15 ≥0.25 ≥0.3
  Primary flat (mm) 32±2 57.5/42±2 notch
  LTV (5mmx5mm) (µm) < 1 < 1 < 1
  TTV (µm) < 1.5 < 3 < 5
  Bow (µm) ±20 ±30 ±40
  Warp (µm) ≤ 25 ≤ 30 ≤ 50
  PLTV (<0.5µm within 5*5mm)  % ≥95% ≥95% ≥95%
  Edge bevel According with IEC62276& SEMI M1.2 Standard
  Polished side Ra (nm) ≤1.5
  Back Side Criteria (µm) general Ra:0.2-0.5or polished  
 
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