Basic materials characteristics | |||
Density, g/cm3 : | 2.65 | ||
Melting point, °C: | 1467 | ||
Thermal conductivity, W/(m x K) (T = 25°C): | 10.7 (parallel to axis Z) | 6.2 (perpendicular to axis Z) | |
Hardness (Mohs): | 7 | ||
Dielectric ñ onstant at 30 MHz: | 4.34 (parallel to axis Z) | 4.27 (perpendicular to axis Z) | |
Young's modulus (E), GPa: | 97.2 (parallel to axis Z) | 76.5 (perpendicular to axis Z) | |
Chemical stability: | insoluble in water |
Cutting type: | AT. BT.CT.DT.X.Y.Z etc and double rotated IT/,SC/FC/LST etc |
Synthetic Q Value: | Up to 3.0 mil IEC |
ECD level: | Max 300/cm2 down to 0 |
Surface finished: | Lapped by #1000/#2000/#3000/#4000/#6000/#8000 or precision Polished with Ra<1nm |
Θ angle Tolerance: | Down to ±5” |
ɸ angle Tolerance: | Down to ±3’ |
Frequency: | Up to 100 MHz -fundamental |
Round outline: | From Ø3mm to 8”(200mm) diameter big wafer |
Square outline: | From SMD3225 up to 200×200mm big wafer |
Special typical specs: | 6MHz monitor blanks and series SC-cut blanks with plano-convex/bi-convex surface |